The available history contains 46 observations from 2025-04-01 to 2026-10-20. These are recorded dates, not proof of the earliest available publication; missing intervals are not interpolated.
ChangXin Memory Technologies forecast RMB 265-270 billion of revenue for the first nine months of 2026, more than sevenfold higher year on year, but told shareholders that third-quarter net profit growth slowed to just 1-4% sequentially as DRAM price gains moderate.
Nanya Technology's third-quarter average selling prices rose more than 60% quarter on quarter with gross margin at 85.7%, while Samsung and SK hynix are developing AI-tuned NAND lines as enterprise SSD demand lifts profitability.
TrendForce projects conventional DRAM contract prices will rise 10-15% quarter on quarter in 4Q26 and NAND Flash 15-20%, with enterprise SSD the only category where price growth accelerates, while CXMT readies 4F2-based server DDR5 RDIMMs.
TrendForce projects conventional DRAM contract prices up 10-15% quarter on quarter and NAND Flash up 15-20% in 4Q26, with enterprise SSD the only category accelerating, while NVIDIA's NVHBM pushes Micron and Samsung toward foundry-made base dies.
NVIDIA's custom NVHBM architecture moves the memory controller onto the HBM base die, prompting Micron and Samsung to source base dies from external foundries including TSMC rather than building them in-house. The shift lands as suppliers push 2027 HBM prices sharply higher: Samsung is reportedly seeking more than double current levels for HBM4, while TrendForce sees industry average HBM ASP up 121% next year.
DRAM spot prices were flat week on week while 512Gb TLC NAND wafer spot fell 2.9%, even as TrendForce forecasts 4Q26 contract prices up 10-15% for DRAM and 15-20% for NAND and Samsung heads into third-quarter results expected to show a memory operating margin above 80%.